Conference on Earth Station Technology, 14-16 October 1970
Subramanian S. Iyer, Subramanian S. Iyer, Andre J. Auberton-Herve
The use of silicon-on-insulator (SOI) technology in microelectronics is proliferating and is ready to be applied in a growing number of IC fabrication situations. Bonding of single crystal Si to dielectrics, normally silicon dioxide, is a key method of producing SOI structures and this work is designed to assist engineers directly in applying emerging SOI technology in practice. Wafer bonding principles, grind and polish back, Smartcut, Eltran and wafer characterization are all explained and illustrated for the benefit of the process development engineer.
Also available:
Silicide Technology for Integrated Circuits - ISBN 9780863413520
Fabrication of GaAs Devices - ISBN 9780863413537
The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including:
-Power & Energy
-Renewable Energy
-Radar, Sonar & Navigation
-Electromagnetics
-Electrical Measurement
-History of Technology
-Technology Management
Категории:
Год:
1970
Издательство:
Institution of Electrical Engineers
Язык:
english
Страницы:
446
ISBN 10:
0852960395
ISBN 13:
9780852960394
Серия:
Institution of Electrical Engineers London.; I.E.E. conference publication
Файл:
PDF, 14.97 MB
IPFS:
,
english, 1970
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